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| DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 -0.05 0.16+0.1 -0.06 0.65 -0.15 +0.1 2.8 0.2 5 4 1.5 0 to 0.1 1 2 3 FEATURES * 1.8 V drive available (MOS FET) * Low on-state resistance (MOS FET) RDS(on)1 = 68 m TYP. (VGS = -4.5 V, ID = -1.0 A) RDS(on)2 = 84 m TYP. (VGS = -2.5 V, ID = -1.0 A) RDS(on)3 = 109 m TYP. (VGS = -1.8 V, ID = -1.0 A) * Low forward voltage (Schottky barrier diode) VF = 0.35 V TYP. (IF = 1.0 A) 1.9 2.9 0.2 0.9 to 1.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-95_5p (Mini Mold Thin Type) PIN CONNECTION (Top View) 5 4 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain PA507TE Marking: ZA 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD 100 V TYP. (C = 200 pF, R = 0 , Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16626EJ1V1DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan The mark shows major revised points. 0.4 0.95 0.95 0.65 2003 PA507TE MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch -20 m8 m2 m8 0.57 150 V V A A W C Total Power Dissipation Channel Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t 5 sec. SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25C) Repetitive Peak Reverse Voltage Average Forward Current Surge Current Note4 Note3 VRRM IF(AV) IFSM Tj Tstg 30 1 10 +125 -55 to +125 V A A C C Junction Temperature Storage Temperature Notes 3. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t 5 sec 4. 50 Hz sine wave, 1 cycle 2 Data Sheet G16626EJ1V1DS PA507TE MOS FET ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = m 8 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -1.0 A VGS = -4.5 V, ID = -1.0 A VGS = -2.5 V, ID = -1.0 A VGS = -1.8 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -10 V, ID = -1.0 A VGS = -4.0 V RG = 10 MIN. TYP. MAX. -1 UNIT A A V S m10 -0.45 2.0 -0.75 4.3 68 84 109 380 85 45 10 5 47 28 85 120 180 -1.50 Drain to Source On-state Resistance m m m pF pF pF ns ns ns ns nC nC nC V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -16 V VGS = -4.0 V ID = -2.0 A IF = 2.0 A, VGS = 0 V 4.7 0.9 1.5 0.84 Note Pulsed: PW 350 s, Duty Cycle 2% SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Forward Voltage Reverse Current Terminal Capacitance SYMBOL VF IR CT TEST CONDITIONS IF = 1.0 A VR = 10 V f = 1.0 MHz, VR = 10 V 36 MIN. TYP. 0.35 MAX. 0.38 200 UNIT V A pF TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(-) 0 10% VGS 90% IG = -2 mA PG. 50 RL VDD VDD VDS(-) 90% 90% 10% 10% VGS(-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Data Sheet G16626EJ1V1DS 3 PA507TE MOS FET TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 0.7 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Mounted on FR-4 board of 2 2500 mm x 1.6 mm 100 80 60 40 20 0 0 25 50 75 100 125 150 175 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA - 100 RDS(on) Lim ited (at VGS = -4.5 V) ID(pulse) ID(DC) -1 10 m s - 0.1 Single pulse Mounted on FR-4 board of 2 2500 m m x 1.6 m m -1 - 10 100 m s 5s - 100 PW = 1 m s ID - Drain Current - A - 10 - 0.01 - 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - C/W 100 10 Single pulse Mounted on FR-4 board of 2 2500 mm x 1.6 mm PD (FET) : P (SBD) = 1: 0 1 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 4 Data Sheet G16626EJ1V1DS PA507TE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -8 Pulsed FORWARD TRANSFER CHARACTERISTICS - 10 VGS = -4.5 V VDS = -10 V Pulsed ID - Drain Current - A -6 ID - Drain Current - A -2.5 V -1 - 0.1 -4 -1.8 V - 0.01 TA = 125C 75C 25C -25C -2 - 0.001 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 - 0.0001 0 - 0.5 -1 - 1.5 -2 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 VDS = -10 V Pulsed VGS(off) - Gate Cut-off Voltage - V - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 - 50 VDS = -10 V ID = -1.0 mA 1 TA = -25C 25C 75C 125C 0 50 100 150 0.1 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - C ID - Drain Current - A 200 RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 ID = -1.0 A Pulsed 150 150 VGS = -1.8 V -2.5 V -4.5 V 100 100 50 50 0 - 0.01 0 0 -2 -4 -6 -8 - 0.1 -1 - 10 ID - Drain Current - A VGS - Gate to Source Voltage - V Data Sheet G16626EJ1V1DS 5 PA507TE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 RDS(on) - Drain to Source On-state Resistance - m Ciss, Coss, Crss - Capacitance - pF ID = -1.0 A Pulsed 150 VGS = -1.8 V -2.5 V -4.5 V VGS = 0 V f = 1.0 MHz Ciss 100 100 Coss Crss 50 0 - 50 0 50 100 150 10 - 0.01 - 0.1 -1 - 10 - 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 -4 DYNAMIC INPUT CHARACTERISTICS VGS - Gate to Source Voltage - V ID = -1.0 A td(on), tr, td(off), tf - Switching Time - ns td(off) tf -3 VDD = -4.0 V -10 V -16 V 10 td(on) -2 tr VDD = -10 V VGS = -4.0 V RG = 10 -1 - 10 -1 1 - 0.1 0 0 1 2 3 4 5 ID - Drain Current - A QG - Gate Change - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 Pulsed IF - Diode Forward Current - A 1 VGS = 0 V 0.1 0.01 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G16626EJ1V1DS PA507TE SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25C) FORWARD CURRENT vs. FORWARD VOLTAGE 10 Pulsed REVERSE CURRENT vs. REVERSE VOLTAGE 100 10 75C 1 0.1 0.01 0.001 - 25C 25C T A = 125C P ulsed 1 TA = 125C 75C 25C -25C 0.1 0.01 0 0.2 0.4 0.6 0.8 1 IR - Reverse Current - mA IF - Forward Current - A 0.0001 0 10 20 30 40 VF - Forward Voltage - V VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 1000 f = 1.0 MHz CT - Terminal Capacitance - pF 100 10 0.1 1 10 100 VR - Reverse Voltage - V Data Sheet G16626EJ1V1DS 7 |
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